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| Location: Chico, California |
| Date Posted: February 21, 2012 |
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| TEL Deep Trench Silicon Etcher-TELIUS SP 308 QS (More information: [email removed] http://www.globalnanotechequipment.com) Manufacturer:Tel Model:TEL Deep Trench Silicon Etcher-TELIUS SP 308QS Condition:Used,complete,crated,working before crating. Amount:3 sets TEL Deep Trench Silicon Etcher Model: TELIUS SP 308 QS ETCH TOOL, (4) CHAMBERS, 5 loader ports, 300mm FOUP, Load Locker Modules,4 Deep Trench Silicon Etcher (SCCM) Super Capacitively Coupled Module Chambers,40MHz and 3.2MHz dual Frequency Source (GEW3040 and NOVA50A),ESD chuck, Temperature Control. Specifications 1. Chamber: Aluminum Alloy Chamber, Aluminum Alloy (A6061), Hard Sulfuric Acid Anodizing Surface finishing. 2. RF application method: Apply upper RF to lower electrode, SCCM Type Discharge method. 3. Temperature control: Apply upper RF to lower electrode; 4. Upper electrode: Upper electrode is by Heater and Cooling Water. Lower electrode is by circulating coolant. Side wall is by heater. 5. Upper electrode: Quartz Cover or Aluminum Alloy(A6061) with Hard Sulfuric Acid Anodizing. 6. Shield ring: 7. Lower electrode: Ceramics electro static chuck with Thermometer. Wafer holding method is Electrostatic chuck(φ300) mechanism. 8. Focus ring :Quartz. 9. Exhaust Plate: Aluminum Alloy with Hard Sulfuric Acid Anodizing. 10. Insulation ring: Quartz Cover or Aluminum Alloy(A6061) with Hard Sulfuric Acid Anodizing. 11. Distance between electrodes: 30ïž35 mm. 12. Magnet: Intensity:170G(center), Rotation:20+-1rpm. 13. Pressure monitor: Each chamber has following three kind of pressure monitor. 14. He B.P UNIT: Cooling Gas for Wafer back, PCV(STEC) Pressure Switch, Two lines line/control (Center/Edge),0~7980Pa(0~60Torr) range of pressure, He Leakage monitor, VALVE ON/OFF sensor for Detection of valve open/close. 15. End point detection : SE2000. 16. Confirmation of luminescence. 17. WINDOW: Orifice(Quartz). 18. Deposition shield: Use removable depo-shield(The material is quartz) for easy cleaning of process chamber. 19. Shutter: Aluminium Alloy with Hard Sulfuric Anodizing Plate, Air Cylinder Drive. 20. Final Valve: Diaphragm Type MEGA-One (Fujikin)ã 21. APC 22. Manifold: Aluminium Alloy with Hard Sulfuric Anodizing 23. O-ring for Chamber:: Chemratz 24. Specifications for performance: (1)Ultimate Vacuum: 0.0133 Pa(7.5*10-2 mTorr) or less; （2）Leak Back:0.133 Pa/min(1 mTorr/min) or less.
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